Microwave model for optimizing electro-optical modulation response of the Mach-Zehnder modulator
A. Meighan, W. Yao, M. Wale, and K.A. Williams
Institute of Photonic Integration, Eindhoven University of Technology, P.O. Box 513, 5600 MB, the Netherlands
e-mail: a.meighan@tue.nl
ABSTRACT
A model is created to study the role of impedance matching in indium phosphide modulators. The frequency-dependent characteristic impedance and propagation constant of the electrical transmission line structure is calculated from the cross-section of the phase modulator, electrode geometry, and p-i-n junction. The impedance and propagation constant are used in combination with a closed-form approximation for the traveling wave electrode and electrical circuit to create the non-iterative compact model. It yields good agreement with the experiment in a 50 Ohm measurement environment and the effect of changing source and termination impedance has been modeled. The 3dB optical modulation bandwidth is predicted to increase from 30GHz to 60GHz with optimized impedance matching and the associated suppression of electrical reflections.
Keywords: High-speed modulator, Mach-Zehnder, traveling wave electrode, termination impedance
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Modeling of plasmonic organic hybrid E/O modulators: towards a comprehensive 3D simulation framework
Alberto Tibaldi1;2, Mohammadamin Ghomashi1, Francesco Bertazzi1;2, Marco Vallone1,
Andrea Palmieri1, Michele Goano1;2, and Giovanni Ghione1
1Department of Electronics and Telecommunications, Politecnico di Torino, 10129 Turin, Italy
2IEIIT-CNR c/o Politecnico di Torino, 10129 Turin, Italy
e-mail: alberto.tibaldi@polito.it
ABSTRACT
The paper focuses on the simulation of plasmonic organic hybrid electro/optic modulators. The problem is addressed with two simulation strategies: a divide et impera approach based on 2D RF and optical frameworks, and an all-in-one 3D model. The shortcomings and criticalities of both approaches are discussed through a comparison with experimental results from the literature. Possible extensions of the divide et impera are envisioned, tracing a viable roadmap towards a computationally sustainable and accurate comprehensive 3D simulation framework.
Keywords: Plasmonics, Mach-Zehnder modulators, MZMs, Plasmonic modulators, Plasmonic-organic-hybrid, POH, Electro-optic effect
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InP-based integrated OLT and ONU with cyclic AWG for WDM-PON Student Paper
Aleksandra Paśnikowska, Stanisław Stopiński, Andrzej Kaźmierczak, Ryszard Piramidowicz
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warszawa, Poland
e-mail: aleksandra.pasnikowska.dokt@pw.edu.pl
ABSTRACT
In this work we demonstrate integrated multichannel transceivers dedicated to cost-optimized, fiber-optic communication systems. Two different transceivers are discussed – Optical Line Termination (OLT) and Optical Network Unit (ONU), designed for an application in the WDM-PON access system. The application of cyclic arrayed waveguide gratings (AWGs) is tested in order to achieve better performance of integrated transmitters. Open eye diagrams and an error-free operation at -17 dBm prove the applicability of developed circuits to access systems with wavelength multiplexing.
Keywords: photonic integrated circuit, InP, multichannel transmitter, arrayed waveguide grating, optical access network, cyclic AWG
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Fast Silicon Photonics Wavelength-Selective Phase Shifter
C. Porzi1, F. Falconi2, L. Ansalone3, P. Ghelfi2, A. Bogoni1;2
1TeCIP Institute, Scuola Superiore Sant’Anna, Pisa, Italy
2PNTLab, CNIT, Pisa, Italy
3Agenzia Spaziale Italiana, Roma, Italy
e-mail: c.porzi@santannapisa.it
ABSTRACT
A fast wavelength-selective phase shifter realized in silicon-on-insulator technology based on carrier-depletion effect in a microring resonator suitable for photonic processing of microwave signals is designed and experimentally verified. The proposed approach overcomes the bandwidth limitations of standard thermo-optic tuning while providing large spectral shift of the phase characteristic, minimized amplitude modulation, and low optical insertion loss by proper optimization of ring parameters. The results illustrate a maximum optical phase variation of 250° for a transmission change limited to within 4.5 dB, and large electro-optical bandwidth of 10 GHz.
Keywords: Silicon photonics, microwave photonics, RF phase shifters
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Strain-induced electro-optical effect in silicon Mach-Zehnder modulators (Student paper)
Christian Lafforgue 1, Mathias Berciano 1;2, Lucas Deniel 1, Guillaume Marcaud 1;3, Xavier Le Roux 1,
Carlos Alonso-Ramos 1,Daniel Benedikovic 1, Alicia Ruiz-Caridad 1, Paul Crozat 1,
Delphine Marris-Morini 1, Eric Cassan 1, Laurent Vivien 1
1Universit´e Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
2Now at IMEC, Kapelkreef 75, Leuven, Belgium
3Now at Yale University, New Haven, USA
email: christian.lafforgue@c2n.upsacaly.fr
ABSTRACT
Due to the strong evolution of data transmission worldwide, silicon photonics needs to provide low power consuming and ultra-fast modulators. Pockels effect is known to answer both these demands. However, silicon is a centrosymmetric crystal, which makes it inadequate to use Pockels effect. Nonetheless, by straining a silicon waveguide, it is possible to unlock second order nonlinear optics effects, enabling electro-optic modulation through Pockels effect. In our work, we experimentally demonstrated a high-speed strain-induced Pockels effect based electro-optic modulation in a Mach-Zehnder silicon modulator. We also present a complete analysis of Pockels, Kerr, and free carriers effects.
Keywords: Silicon photonics, Pockels effect, nonlinear optics, modulation.
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LiNbO3 V-Groove Fabrication for Optical Fibre Pigtailing (Student Paper)
Ercan Karagöz1,2, Evren Öztekin1,2, Mutlu Gökkavas1, Ekmel Özbay1,3
1 Bilkent University, Nanotechnology Research Center, Ankara, Turkey
2 Hacettepe University, Department of Nanotechnology and Nanomedicine, Ankara, Turkey
3 Bilkent University, Department of Electrical and Electronics Engineering, Ankara, Turkey
e-mail: ercan.karagoz@bilkent.edu.tr
ABSTRACT
This study aims fabrication of V-grooves in lithium niobate (LiNbO3) crystals for producing optical fibre carrier pigtails. Due to anisotropic thermal expansion of lithium niobate, it is important to use the lithium niobate based fibre optic carriers for pigtailing lithium niobate devices to achieve better thermal stability. V-groove fibre mounts on LiNbO3 was produced using a computer controlled dicing saw with precise V-shaped diamond wheel.
Keywords: LiNbO3, V-groove, fibre pigtailing, packaging.
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Cryogenic operation of a polarisation cinverter and directional coupler in LiNbO3 for quantum circuits (student paper)
Frederik Thiele1, Jan Philipp H¨opker1, Felix vom Bruch 2, Harald Herrmann2,
Raimund Ricken2, Viktor Quiring2, Christof Eigner2, Christine Silberhorn2,
Tim J. Bartley1
1Mesoscopic Quantum Optics, Department of Physics, Paderborn University,
Warburger Str. 100, 33098 Paderborn, Germany
2Integrated Quantum Optics, Department of Physics, Paderborn University,
Warburger Str. 100, 33098 Paderborn, Germany
e-mail: frederik.thiele@uni-paderborn.de
ABSTRACT
Many quantum photonic technologies, such as single photon emitters and superconducting detectors, require cryogenic temperatures at which to operate. Therefore, developing integrated quantum optical components at these temperatures is crucial. We demonstrate an electro-optic polarisation converter and a directional coupler for 1550nm at 0.8K in titanium in-diffused lithium niobate waveguides. The main operation parameters of these integrated devices are preserved, despite the presence of pyro-electric charge build-up. The operation of the polarisation converter preserves the modulation depth of 3035 dB, increases the modulation voltage from 13V to 20V and shows operation up to 25MHz at cryogenic temperatures. The splitting ratio of the directional coupling remains virtually unchanged over the entire temperature range.
Keywords: electro-optics, lithium niobate, cryogenic, polarisation converter, directional coupler
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Design of an Integrated Optical Circuit for Generation of Optical Vortex
Mihai Kusko1, Rebeca Tudor1, Stefan Caramizoiu1, Cristian Kusko1
1 National Institute for R&D in Microtechnologies IMT-Bucharest, 126A Erou Iancu Nicolae Str., Voluntari,
077190, Romania
e-mail: mihai.kusko@imt.ro
ABSTRACT
We present the results of design studies on an integrated optical circuit able to generate optical vortex by superposition of the two first order modes on the horizontal and vertical direction, respectively. The vertical first order mode has been excited by a discontinuity on the vertical direction, the separation of this mode by the remaining fundamental mode has been obtain via a directional coupler. Another very short directional coupler has been employed to transfer the fundamental mode into a first order mode of a larger waveguide. The vertical and horizontal first order modes has been recombined in order to produce an optical vortex.
Keywords: optical vortex, integrated optical circuits, BPM simulations
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Compact InP Wavelength Blocker based on a Single AWG and SOA gates for Metro Networks
N. Tessema, K. Prifti, A. Rasoulzadehzali, R. Stabile, N. Calabretta
Institute for Photonic Integration, Dept. of Elec. Eng, Eindhoven University of Technology,
PO Box 513, 5600MB Eindhoven, The Netherlands
e-mail: n.tessema@tue.nl
ABSTRACT
We present a novel wavelength blocker (WBL) design with a folded configuration for a modular wavelength selective switch (WSS) within the metro network. The folded design enhances scalability of the WSS due its compactness and modularity. The design is experimentally verified with four channels WBL made of a single AWG, SOA-based gates and 90o-waveguide crossing of low loss and low cross-talk (< -65dB). Experimental results show error-free operation with < 1.3dB penalty at 10Gbps NRZ-data.
Keywords: WSS (wavelength selective switch), WBL (wavelength blocker), PIC (photonic integrated circuit).
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Enhanced Optical Readout in Resistive Memory Through Plasmonic Amplification (Student Paper)
Rahul D. Mishra1, Lalit Singh1, Swati Rajput1, Sourabh Jain1 and Mukesh Kumar1*
1 Optoelectronic Nanodevice Research Laboratory, Department of Electrical Engineering,
Indian Institute of Technology Indore, Madhya Pradesh, India
*e-mail: mukesh.kr@iiti.ac.in
ABSTRACT
An electrically writable resistive switch with optical readout capability is proposed with a high extinction ratio of 16 dB utilizing plasmonic amplification in InGaP. The proposed device operating at 1550 nm wavelength shows an optical gain of 2.4 dB. The optical readout is less error prone and has low energy consumption then it’s electrical counterpart. The high index layer, bottom electrode material, provide dual benefits: low loss waveguiding of light and electrical rectification. The device can find applications in optical interconnects, optical modulation, memory and neuromorphic computations.
Keywords: resistive switch, electrical pumping, optical memory, intensity modulator, hybrid plasmonic, integrated photonics.
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Side Mode Suppression Ratio Reduction in Mach-Zehnder Modulators Using Slow-Light Waveguides
Reza Hosseini1,3, Shahryar Sabouri1, Arijit Misra2, Stefan Preußler2, Thomas Schneider2, and Kambiz
Jamshidi1
1 Integrated Photonic Devices Lab, Chair of RF, Technische Universität Dresden, 01062 Dresden, Germany
2 Terahertz-Photonics Group, Institut für Hochfrequenztechnik, TU Braunschweig, Schleinitzstraße 22, 38106
Braunschweig, Germany
3 SIMULIA Solution Consultant at Dassault Systemes Deutschland GmbH
e-mail: kambiz.jamshidi@tu-dresden.de
ABSTRACT
Slow-light waveguides are investigated to reduce the side mode suppression ratio (SMSR) of reverse-biased silicon Mach-Zehnder modulators. The SMSR of single arm-biased modulators is decreased by more than one order of magnitude at a slowdown factor of 5. This enables the reduction of SMSR without the need for high RF powers. A slow-light modulator with a slowdown factor of 4 can achieve an SMSR value of 9dB using -5dBm RF power whereas 15dB more RF power is required to achieve the same effect using standard modulators.
Keywords: Silicon photonics, Microwave photonics, Side mode suppression, Integrated optics, Modulators.
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Integrated Microwave Photonic Signal Generation System based on the External Modulation Technique
Robinson Guzman1, Alberto Zarzuelo2, Jessica César1, Muhsin Ali1, Jean-Raphael Fernández2, Oscar Valles2, Miguel Virseda2, Fernando Martin2, Luc Augustin3 and Guillermo Carpintero1
1Universidad Carlos III de Madrid, 28911 Leganés, Madrid, Spain
2SENER Aeroespacial, 28760 Tres Cantos, Madrid, Spain
3SMART Photonics, 5656 AE Eindhoven, The Netherlands
e-mail: rcguzman@ing.uc3m.es; guiller@ing.uc3m.es;
ABSTRACT
We present the first photonic integrated circuit for microwave photonic application, implementing signal generation based on the external modulation technique. The quality of the signal is determined by the reference oscillator, which is multiplied by a factor of 2.
Keywords: Microwave photonics, Photonic integrated circuits, Mach-Zehnder modulator.
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Optical fiber-to-chip assembly process for ultra-low loss photonic devices based on silicon nitride for space applications
A. Brimont1, D. Zurita1, V. C. Duarte2, T. Mengual2, B. Chmielak3, S. Suckow3, A.
Giesecke3, M. A. Piqueras2, P. Sanchis1
1Nanophotonics Technology Center, Universitat Politècnica de València,
Camino de Vera s/n, 46022 Valencia, Spain
2DAS Photonics, Camino de Vera s/n, 46022 Valencia, Spain
3AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
e-mail: pabsanki@ntc.upv.es
ABSTRACT
In this work, we demonstrate an efficient fiber array-to-chip assembly process with a high number of input/output ports. The proposed approach is based on using a pre-alignment coupling structure to separately align the input and output ports. The assembling process has been experimentally validated in photonic integrated circuits fabricated with an ultra-low-loss waveguide technology based on silicon nitride, which features propagation losses as low as 9.5 dB/m. The developed technology is expected to extend the use of integrated photonics for space applications.
Keywords: silicon nitride, fiber-to-chip coupling, assembling, packaging.
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