These papers were presented in the session Transreceivers and high speed devices during the European Conference on Integrated Optics, 22nd edition 2020 in Paris
Mark Earnshow – (Invited) Challenges and opportunities in photonics/electronics co-packaging for next generation receivers
Silicon-germanium p-i-n photodiodes with double heterojunction: high-speed operation at 10Gbps and beyond
Daniel Benedikovic1, Léopold Virot2, Guy Aubin1, Jean-Michel Hartmann2, Farah Amar1, Bertrand Szelag2, Xavier Le Roux1, Carlos Alonso-Ramos1, Paul Crozat1, Éric Cassan1, Delphine Marris-Morini1, Charles Baudot3, Frédéric Boeuf3, Jean-Marc Fédéli2, Christophe Kopp2, and Laurent Vivien11Universite Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France2University Grenoble, Alpes and CEA, LETI, Grenoble, France3STMicroelectronics, Silicon Technology Development, Crolles, Francee-mail: email@example.com
We present recent resultsonhigh-speed waveguidep-i-nphotodetectors with lateral hetero-structured Silicon-Germanium-Silicon (Si-Ge-Si) junctions monolithically integrated on Silicon-on-Insulator substrates. Opticalphotodetectorsleverageaunique integration strategy, combiningbutt-waveguide-coupling and lateral Si-Ge-Si p-i-n hetero-junctions. Fabrication is then easier, more robust and fully compatible withavailable Si-foundry processes.Under a low-voltage operation, 1μmwide deviceshavedark currents of at most150 nA, highresponsivity of 1.2 A/W, and -3dB cut-off frequency of 12 GHz. Furthermore, an errorless detectionis experimentallyachievedfor a conventional 10 Gbps data rate, withpower sensitivitydown to -13.9 dBm with a bit-error-rate (BER) of 10-9.Moreover, under avalanche operation, a 0.8μmwide p-i-n diode offersattractive improvements in opto-electrical performances. In particular, initial results show that device responsivity is enhanced from 0.42A/W up to2.79 A/W thanks to anavalanche multiplication gain of 6.7. The cut-off frequency remains larger than 17 GHz with a gain of 10.6, resulting in a gain-bandwidth productgreater than180GHz. These promising results also yielderror-free communicationat10-9with28 Gbps signal, providing power sensitivities down to -12.7 dBmat 10-9BER. These results make hetero-structured p-i-n photodetectors appealing choice for high-bit-rate systems in integrated silicon nanophotonics
240 Gb/s (8×30 Gb/s) Directly Modulated Transmitter Monolithically Integrated on InPG.
Contestabile1, F. Bontempi1, and N. Andriolli11Scuola Superiore Sant’Anna, Via Moruzzi 1, 56124 Pisa, Italynow with National Research Council of Italy -Institute of Electronics, Computer and Telecommunication Engineering (CNR-IEIIT), Via Caruso 16, 56122 Pisa, Italye-mail: firstname.lastname@example.org
We report a high-speed integrated 8-channel transmitter fabricated using a generic InP integration platform. The photonic integrated circuits (PICs) include tunable directly modulated DFB lasers emitting in the C-band, monitoring photodetectors, MMI couplers and output spot size converters. The directly modulated lasers, designed in order to fit within a 100 GHz grid, show a maximum 3-dB small signal bandwidth of 21GHz and a tunability range of about 4nm. Operation up to 30Gb/s per channel is reported for 200+ Gb/s applications.
Session 6 Transreceivers and high speed devices took place on June 23, 2020.
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