Widely Tunable 2.6 μm GaSbDiode Lasers UtilizingDiffraction Gratings or Silicon Photonics Reflectors (Student Paper)
Samu-Pekka Ojanen1, Jukka Viheriälä1, Matteo Cherchi2, Nouman Zia1, Eero Koivusalo1,Pentti Karioja3and Mircea Guina11Optoelectronics Research Centre, Physics Unit, Tampere University, FI-33720 Tampere, Finland2VTT Technical Research Centre of Finland, FI-02044 Espoo, Finland3VTT Technical Research Centre of Finland, FI-90570 Oulu, Finlande-mail: firstname.lastname@example.org
We present two tunable extended cavity laserconfigurationsemitting around 2.6 μm. The gain is provided by a type-I GaSb-based quantum well heterostructure. To demonstrate the high power andbroad tuning capabilities of the gain material, an extendedcavity laser based on feedback via a diffraction grating is demonstrated.Tuning range of 154 nm, with an average output power of ~10 mW at 2.63 μm, corresponding toa peak power of ~100 mW, is demonstrated. For a more compact and integrable configuration, we demonstrate an extended cavity laser utilizing silicon photonics resonators, where the feedback and tuning is obtained via Vernier effect between two microring resonators. Here, atuning range of ~70 nm, with anaverage output power of ~1 mWat2.55 μm, corresponding to a peak power of ~10 mW, are demonstrated.
Dispersion Trimming for Mid-Infrared Supercontinuum Generation in Silicon-Germanium on Silicon Wave guides (Student paper)
Alberto Della Torre1, Milan Sinobad1,2, Rémi Armand1, Barry Luther-Davies3, Pan Ma3, Stephen Madden3, Sukanta Debbarma3, Khu Vu3,David J. Moss4, Arnan Mitchell2, Jean-Michel Hartmann5, Jean-Marc Fedeli5, Christelle Monat1, Christian Grillet11Université de Lyon, Institut des Nanotechnologies de Lyon (INL), 69131 Ecully, France2School of Engineering, RMIT University, Melbourne, VIC 3001, Australia3Laser Physics Center, Australian National University,Canberra, ACT 0100, Australia4Centre for Microphotonics, Swinburne University of Technology, Hawthorn, VIC 3122, Australia5Université Grenoble Alpes, CEA-Leti, 38054 Grenoble Cedex 9, Francee-mail: email@example.com
We report octave spanning mid-infrared supercontinuum generation in ahighly nonlinear silicon germanium-on-silicon ridge waveguide. We show that, by adding a chalcogenide cladding, it is possible to trim a posteriori the waveguide’s dispersion profile which, in turn, governs the properties of the generated supercontinuum. In particular, we experimentally show that a shift from anomalous to normal dispersion takes place when a 1.26 μm thick cladding layer of Ge11.5As24Se64.5 is added. Finally, we show that the group velocity dispersion of the waveguide can be precisely controlled by changing the thickness of the cladding layer.This demonstrates that the heterogeneous integration of materials can be used as a post-processing technique to precisely control the supercontinuum properties.
Jerome Faist – (Invited) Quantum cascade lasers
Optical modulation from 5 to 11 μm wavelength range using Ge-rich graded SiGe waveguides Student paper
Miguel Montesinos-Ballester1, Qiankun Liu1, Carlos Alonso-Ramos1, Xavier Le Roux1, Lucas Deniel1, David Bouville1, Jacopo Frigerio2, Andrea Ballabio2, Laurent Vivien1, Giovanni Isella2, andDelphine Marris-Morini11Université Paris-Saclay, Univ. Paris-Sud, CNRS,Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France2L-NESS, Dipartimento di Fisica, Politecnicodi Milano, Polo di Como, Via Anzani 42, 22100 Como, Italye-mail: firstname.lastname@example.org
The mid-infrared (mid-IR) wavelength rangehost unique vibrational and rotational resonancesof a large number of molecules. The spectrum fingerprint can be used to detect the molecular compositionsin a non-intrusive way. To analyse simultaneously as many molecules as possible in the same device, wide operational bandwidth is a must. This work reports the first demonstration of optical modulation in mid-IR photonic circuit reaching wavelengths larger than 8 μm, showingwide optical modulationfrom 5.5 to 11 μmwavelength range. This experimental demonstration confirmscurrentfree-carrier absorption theoretical models, pavingthe way towards efficient,high-performance,electrically-driven integrated optical modulators. Those devices are expected to have a strong impactin many applications,as they can be used to greatly enhance the detection sensitivity by synchronous detection.
Session 4 Mid-IR Photonics took place on June 23, 2020.
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