Application of Magneto-optic Material to Silicon Photonic Integrated Circuits
(Invited paper) Tetsuya Mizumoto1, Yuya Shoji2, Daiki Kano11 Tokyo Institute of Technology 2 Institute of Innovative Research, Tokyo Institute of Technology e-mail: email@example.com
Optical isolators are fabricated on a silicon waveguide platform by directly bonding a magneto-optic garnet. The fabricated devices exhibit performance characteristics of a 30 dB isolation, a 20-dB isolation bandwidth of 8 nm, and a temperature-insensitive backward isolation. As another application of magneto-optic garnet, an optical switch is also fabricated having a latching function. Keywords: photonic integrated circuit, silicon photonics, magneto-optic garnet, optical isolator, optical switch
Hybrid silicon nitride-lithium niobate integrated platform for electro-optic conversion
Mikhail Churaev1, Simon H ̈onl2, Rui Ning Wang1, Charles M ̈ohl2, Tianyi Liu1, J. Connor Skehan1,Johann Riemensberger1, Daniele Caimi2, Junqiu Liu1, Paul Seidler2, Tobias J. Kippenberg11Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland2IBM Research – Zurich, CH-8803, R ̈uschlikon, Switzerlande-mail: firstname.lastname@example.org, email@example.com
We demonstrate the integration of a silicon nitride Damascene photonic platform with thin-film lithiumniobate on insulator (LNOI) via direct wafer bonding. This process enables fabrication of hybrid microresonatorsexploiting second- and third-order nonlinearity with Q-factor of 1 million, as well as integrated travelling waveEO modulators.
Liquid crystal phase shifter integrated in a silicon photonics platform
Lukas Van Iseghem1,2, Umar Khan1,2, Pierre Edinger3, Carlos Errando-Herranz3,Alain Yuji Takabayashi4, Hamed Sattari4, Kristinn B. Gylfason3,Niels Quack4, Jeroen Beeckman2,5and Wim Bogaerts1,21Photonics Research Group, Ghent University-IMEC, Dept. of Information Technology, Ghent, Belgium2Center of Nano and Biophotonics, Ghent, Belgium3KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden.4 ́Ecole Polytechnique F ́ed ́erale de Lausanne (EPFL), 1015 Lausanne, Switzerland.5Liquid Crystal and Photonics, Ghent University, Dept. of Electronics and Information Systems, Ghent, Belgiume-mail: firstname.lastname@example.org
We demonstrate a compact phase shifter using liquid crystal actuation, integrated in an established siliconphotonics platform. The devices are fabricated using IMEC’s iSiPP50G platform with a simple post-processing,making this technology compatible with current fabrication possibilities. In this first device demonstration wemeasure 0.75πphase shift for 10 V actuation over a 60μmlength.
Electro-Optic Slot Waveguide Phase Modulator in the IMOS platform(Student Paper)
A.A. Kashi1, J.J.G.M. van der Tol1, Y. Jiao1and K.Williams11Institute for Photonic Integration (IPI), Eindhoven University of Technology, the NetherlandsE-mail: A.Abbas.Kashi@tue.nl
We present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. For the first time, it is developed and fabricated on an InP based membrane.Low-frequency characterization of this modulator shows that it can achieve 𝑉𝜋𝐿𝜋as low as 3 V.mm. Here, working principle, design and fabrication of this modulator is presented.
Erbium-doped oxide for optical gain on hybrid silicon photonics platforms (StudentPaper)
Alicia Ruiz-Caridad1, *, Guillaume Marcaud1,2,Jianhao Zhang1,Christian Lafforgue1, Joan Manel Ramirez3, Elena Durán-Valdeiglesias1, Ludovic Largeau1, Thomas Maroutian1, Sylvia Matzen1, Stephane Collin1, Carlos Alonso-Ramos1, Guillaume Agnus1, Sylvain Guerber1,4, Charles Baudot4, Frédéric Boeuf4, Vladyslav Vakarin1, Eric Cassan1, Delphine Marris-Morini1, Philippe Lecoeur1, Laurent Vivien1.1Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N -Palaiseau, 91120 Palaiseau, France2Now in department of Applied Physics, Yale University, New Haven, CT, USA3 III-V lab, a joint lab from Nokia Bell Labs, Thales and CEA, 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex4 TR&D STMicroelectronics SAS, Crolles, 38920, Francee-mail: email@example.com
Increase of power consumption on integrated opticaldevices for photonic applications has encouraged material engineering to explore new materials and its properties. One of the main challenges on silicon photonics for optical applications is the hybrid integration of these materials due to the lattice mismatch imposed by silicon. In this regard, yttria-stabilized zirconia (YSZ) with a lattice parameter similar to silicon and several functional oxides has been widely studied . Moreover, YSZ waveguides have demonstratedlow propagation loss, and no two photon absorption (TPA). Furthermore, itis transparent from the ultraviolet to the near-infrared and exhibit good Kerr effect. It was recently demonstrated about2 dB/cm propagation losses in waveguides etched on YSZ at a wavelength of 1380 nm . In order to grow an active material as waveguide cladding, we doped YSZ with Er3+ions with a wavelength emission within the C-band of telecommunication window (=1530 nm). In our study, we have considered Er:YSZ cladding deposited by Pulsed Laser Deposition (PLD) on a hybrid SiNxwaveguide. Moreover, we demonstratedguided emission for near-IR transitions of erbium ions under continuous-wave pump laser excitation at 1480 nm. Enhancement of Er3+ion output signal at 1530nmwill be discussed and explored and preliminaryoptical gain will be presented
Ultra-compact low-power hybrid VO2/Si waveguide switch (Student paper)
Jorge Parra1, Todora Angelova1, Mariela Menghini2,3, P ́ıa Homm2, Jean-Pierre Locquet2, Pablo Sanchis1,∗1Nanophotonics Technology Center, Universitat Polit
ecnica de Valencia,Camino de Vera s/n, 46022 Valencia, Spain2Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium3IMDEA Nanociencia, Calle Faraday 9, E28049, Madrid, Spaine-mail: firstname.lastname@example.org
Phase change materials such as vanadium dioxide (VO2) could enable new functionalities in the silicon pho-tonics platform. Here, we propose a hybrid VO2/Si waveguide switch enabled by a SiO2upper-cladding with anon-top microheater. The feasibility of fabricating this device is demonstrated by experimentally depositing a SiO2upper-cladding with plasma-enhanced chemical vapor deposition (PECVD). Results show power consumptionof 260μW and switching speed of 4.8μs with an extinction ratio of around 20 dB for a 2-μm-long switch.
Skylar Dekkof-Jones (Invited) – 2-D Material Photonic Integration
Session 1 Heterogenous integration took place on June 23, 2020.
If you want more information about Photonics Applications, click here.