Germanium on Silicon photonic devices – Presented by Motoki Yako, The University of Tokyo

Germanium on Silicon photonic devices – Presented by Motoki Yako, The University of Tokyo at the 19th edition European Conference on Integrated Optics, which takes place on 3 – 5 April 2017 at Eindhoven University of Technology, Blauwe Zaal in Eindhoven, The Netherlands.

Our recent progress will be presented on Ge-based near-infrared photonic devices for Si photonics. High-performance Ge photodetectors with a vertical pin configuration have been integrated with Si-based optical waveguides, where Ge epitaxial layers are selectively grown on Si-on-insulator layers by chemical vapor deposition. Ge/SiGe heterostructures will be discussed toward low-noise and low-voltage avalanche photodiodes. Strained SiGe overlayers will be also discussed as the stressors to control the operation wavelengths for Ge photodiodes as well as for Franz-Keldysh electro-absorption optical modulators.

About The University of Tokyo
The University of Tokyo was established in 1877. The Department of Materials Engineering was first established as the Department of Mining and Metallurgy in 1886, at the same time as the School of Engineering was founded as the Technical College.

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