Membrane III-V phonic devices on SiO2/Si substrate (Invited paper)
Shinji Matsuo
NTT Device and Material Labs, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
shinji.matsuo.vm@hco.ntt.co.jp
ABSTRACT
We have developed membrane Distributed Reflector (DR) lasers and photonic crystal (PhC) lasers on SiO2/Si substrate for datacom and computercom applications. We employ direct bonding and regrowth techniques to fabricate buried heterostructure on SiO2/Si substrate. The increase of optical confinement factor is essential to achieve low operating energy.
We fabricated 8-ch DR laser array and each laser was directly modulated by 50-Gbit/s PAM-4 signal. An SiN arrayed waveguide grating (AWG) filter was used to multiplex output signals from 8-channel DR laser array.
The PhC laser with 2.5-um long active region exhibited a threshold current of 22 μA and modulated a 10-Gbit/s NRZ signal with 7-fJ/bit operating energy. These results indicate that the membrane lasers on SiO2/Si substrate are highly suitable for use as a transmitter in datacom and computercom applications.
Membrane III-V phonic devices on SiO2/Si substrate
PZT-based Pockels Modulators on Silicon and Silicon Nitride Waveguides
(Invited paper)
Koen Alexander,1,4 John P. George,2,4 Gilles F. Feutma,2,4 Tessa Van de Veire,2,4 Jochem Verbist,1,3,4
Bart Kuyken,1,4 Jeroen Beeckman,2,4 and Dries Van Thourhout 1,4
1 Photonics Research Group, INTEC, Ghent University-imec, Technologiepark 15, 9052 Ghent – Belgium
2 Liquid Crystals and Photonics Group, ELIS, Ghent University, Technologiepark 15, 9052 Ghent – Belgium
3 IDLab, INTEC, Ghent University, Technologiepark 15, 9052 Ghent – Belgium
4 Center for Nano- and Biophotonics, Ghent University, Belgium
e-mail: Dries.VanThourhout@ugent.be
ABSTRACT
In this paper, we will present our recent progress on PZT-based Pockels modulators integrated on Silicon and Silicon Nitride waveguide platforms. The PZT layers are deposited using chemical solution processing methods, using a dedicated buffer layer. Large Pockels coefficients, low losses (<1dB/cm) and VπL ≈ 3.2 V.cm were measured. A bandwidth above 30GHz was obtained.
Keywords: Integrated optics, silicon photonics, optical modulators, ferroelectric materials.
PZT-based Pockels Modulators on Silicon and Silicon Nitride Waveguides