Brillouin based lasers, nonreciprocity, and cooling in silicon (Invited paper)
Peter T. Rakich1, Eric Kittlaus1, Nils Otterstrom1, Ryan Behunin2, Shai Gertler1, Prashanta Kharel1
1Department of Applied Physics, Yale University, New Haven CT, USA
2Dept. of Physics and Astronomy, Northern Arizona University, Flagstaff AZ, USA
e-mail: peter.rakich@yale.edu
ABSTRACT
We use a new class of optomechanical waveguides–that produce enhanced light-sound coupling–to realize strong and tailorable stimulated Brillouin scattering interactions silicon photonics. Exploiting these interactions
in a variety of different structures, we create high-gain Brillouin amplifiers and integrated Brillouin lasers within a silicon-on-insulator platform. Using a Brillouin active multimode waveguide to realize efficient interband coupling, we also demonstrate a tunable and wideband (>100GHz) nonreciprocal light propagation as the basis for multiport circulator technologies. Leveraging similar concepts in a resonant geometry, we describe a high gain unidirectional amplifier that yields 30dB of optical isolation. Finally, we demonstrate laser cooling of Brillouin-active phonon modes within guided-wave systems as a means of controlling noise within a broad class of Brillouin technologies.
Keywords: silicon photonics, Brillouin, waveguide, nonlinear optics
Brillouin based lasers, nonreciprocity, and cooling in silicon
110 Gbit/s On-Off-Keying Based on High Temperature Resistant Polymer Modulator (Invited paper)
Shiyoshi Yokoyama, Guo-Wei Lu, Xiaoyang Cheng, and Feng Qiu
Institute for Materials Chemistry and Engineering, Kyushu University, Japan
e-mail: s_yokoyama@cm.kyushu-u.ac.jp
Abstract
A high-temperature resistant electro-optic (EO) polymer modular is fabricated and demonstrated for generating reliable 110 Gbit/s OOK. The polymer is performed on the silicon Mach-Zehnder interferometer toward possible hybrid silicon and polymer photonic platform. We demonstrated high-bit rates signalling with low BER properties below FEC threshold. Because of the high thermal-stability of the EO polymers, negligible degradation of modulations was observed up to 90°C
Keywords: polymer modulator, silicon waveguide, on-off-keying, PAM4
110 Gbit/s On-Off-Keying Based on High Temperature Resistant Polymer Modulator
Growth of Organic Crystalline Thin Films with Strong Second-Order Nonlinearity for Integrated Optics
Artur Hermans1,2, Stéphane Clemmen1,2,3, Roel Baets1,2, Jan Genoe4,5, Cédric Rolin4
1 Photonics Research Group, Ghent University-imec, 9052 Ghent, Belgium
2 Center for Nano- and Biophotonics, Ghent University, 9052 Ghent, Belgium
3 Laboratoire d’Information Quantique, Université Libre de Bruxelles, 1050 Brussels, Belgium
4 Large Area Electronics Department (LAE), imec, 3001 Leuven, Belgium
5 Department of Electrical Engineering (ESAT), KU Leuven, 3001 Leuven, Belgium
e-mail: Artur.Hermans@UGent.be
ABSTRACT
We demonstrate the growth of highly nonlinear crystalline thin films of N-benzyl-2-methyl-4-nitroaniline (BNA) with a controllable crystal orientation. These films are obtained by crystallizing the material in a temperature gradient. Through second-harmonic generation experiments at a fundamental wavelength of 1550 nm, we found a second-order nonlinearity of (153 ± 70) pm/V. This greatly exceeds the value of 54 pm/V for LiNbO3, the benchmark nonlinear crystal. Moreover, the crystalline films are grown on amorphous substrates with processing temperatures not exceeding 115°C, making them suitable for back-end photonic integration on a CMOS chip. We envisage the growth of BNA crystalline films on silicon nitride photonic integrated circuits, where a strong second-order nonlinearity is lacking.
Keywords: nonlinear materials, thin films, crystal growth, organic crystals, second-harmonic generation
Growth of Organic Crystalline Thin Films with Strong Second-Order Nonlinearity for Integrated Optics
Si and Si-rich silicon-nitride waveguides for optical transmissions and wavelength conversion around 2 μm
Mamon Lamy1, Christophe Finot1, Cosimo Lacava2, Günther Roelkens3, Bart Kuyken3, Periklis Petropoulos2 and Kamal Hammani 1
1 Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne-Franche-Comté, 9 av. A. Savary, 21078 Dijon cedex, France
2 Optoelectronics Research Centre, University of Southampton, SO17 1BJ, Southampton, United Kingdom
3 Photonics Research Group, Ghent University, imec, 9052 Ghent, Belgium
e-mail: kamal.hammani@u-bourgogne.fr
ABSTRACT
We show that cm-long silicon or silicon-rich nitride waveguides with subwavelength transverse dimensions can efficiently sustain high-speed transmissions at 2 μm. We report the transmission of a 10 Gbit/s signal with negligible power penalty. Parametric conversion in both continuous and pulsed pump regimes is also demonstrated.
Keywords: Silicon waveguide, si-rich silicon-nitride waveguides ; 2 μm optical communications ; wavelength conversion