InP Membrane on Silicon (IMOS) Photonics (Invited paper)
Jos van der Tol1, Yuqing Jiao1, Jorn van Engelen1, Vadim Pogoretskiy1, Amir Kashi1, Kevin Williams1
1Photonic Integration Group, Eindhoven University of Technology, 5600 MB Eindhoven, the Netherlands
InP membranes have appeared in the last decade as a viable integrated photonics platform, suitable for adding photonic functions to silicon electronics. It combines the strengths of silicon photonics (high index contrasts and therefore small footprint devices) with those of generic InP-platforms (monolithic integration of active and passive devices). A range of functionalities has been developed on this platform, which goes by the name of IMOS (Indium phosphide Membrane on Silicon). Competitive performances have been demonstrated for lasers, fast detectors, waveguides, filters, couplers, modulators etc. The present contribution describes the recent developments in this platform regarding the technology and results. Among the latest results are record low propagation losses, improved input/output grating couplers, a variety of laser structures and improved wavelength demuliplexers These developments demonstrate that IMOS has a high potential to deliver photonic integrated circuits to a wide variety of application fields, e.g. telecom, datacom, sensing, terahertz and many others.
Keywords: Photonic integration, Indium Phosphide, Membranes, Lasers, Waveguides
Fundamental and Subharmonic Hybrid Mode Locking of Semi-assembled Semiconductor Ring Laser in InP Generic Foundry
Mu-Chieh Lo, Robinson Guzmán, Jessica Cesar, Muhsin Ali, Alberto Zarzuelo, Guillermo Carpintero
Department of Electronic Technology, Universidad Carlos III de Madrid, 28911 Leganés, Spain
e-mail: email@example.com, firstname.lastname@example.org
We report on 12.5-GHz microwave generation via passive, fundamental and subharmonic hybrid mode-locking of a foundry-fabricated ring laser IC on a RF-compatible submount. The 200-kHz RF linewidth for PML is greatly reduced to Hz-level for HML, and 25-dB single-sideband phase-noise suppression for 15-dBm RF injection power is achieved. In subharmonic HML, the compromise between supermode intensity and phase noise is analyzed.
Keywords: photonic integrated circuits, mode-locked lasers, microwave photonics
Direct bandgap hexagonal SiGe: A light emitter for Si-photonics?
J.E.M. Haverkort1, A. Dijkstra1, E. Fadaly1, Y. Ren1, G. Reithmaier2, D. Busse2, J. Suckert3, J. Furthmueller3, M.A. Verheijen1, S. Botti3, J.J. Finley2, E.P.A.M. Bakkers1
1Eindhoven University of Technology, 5600 MB, Eindhoven, The Netherlands
2Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
3Friedrich-Schiller University of Jena, 07743 Jena, Germany
Hexagonal crystal phase Si1-xGex is a direct bandgap semiconductor for x>70%. We observe tunable light emission from 1.9 up to 3.5 μm at 4K as well as amplified spontaneous emission for Hex-Ge. Applications for Si-photonics will be discussed.
Keywords: SiGe light source, direct bandgap, Silicon photonics, hexagonal crystal structure.
The Effect of Optical Comb Spacing, Detuning and Injected Power on Optical Demultiplexing through Injection Locking (Student Paper)
Kevin Shortiss 1;2, Mohamad Dernaika1;3, Maryam Shayesteh1;2, Frank H. Peters 1;2
1Department of Physics, University College Cork, Ireland
2Integrated Photonics Group, Tyndall National Institute, Cork, Ireland
3Department of Electrical and Electronic Engineering, University College Cork, Cork, Ireland
We present a study on the effectiveness of optical injection locking as a method of demultiplexing narrowly spaced optical combs. Numerical and experimental results are presented, which show how the side mode suppression ratio of demultiplexed optical combs varies with respect to the optical comb spacing, injected optical power, and detuning.
Keywords: Injection locking, optical combs, photonic integration
Optical Frequency Comb Generation Using CMOS Compatible Cascaded Mach-Zehnder Modulators Student Paper
Zifei Wang, Ming Ma, and Lawrence R. Chen
Department of Electrcial and Computer Engineering, McGill University,
3480 University Street, Montreal, QC H3A 0E9 Canada
We demonstrate flexible optical frequency comb generation using two cascaded push-pull Mach-Zehnder modulators fabricated using a CMOS-compatible process. The optical comb has nine phase-locked frequency lines spaced at 5 GHz or 6 GHz with a signal-to-noise ratio of 40 dB after optical amplification and filtering. The envelope of the comb has a rectangular-shape and the corresponding time-domain waveform fits well with sincshaped Nyquist pulses having pulse widths of 17 ps or 20 ps.
Keywords: optical frequency comb generation, cascaded Mach-Zehnder modulators, silicon-on-insulator.