III-V on SOI photonic crystal devices (Invited paper)
Quentin Chateiller1,2, Francesco.Manegatti1, Gabriel Marty1, Dimitris Fitsios1 and Fabrice Raineri1,2
1 Centre de Nanosciences et de Nanotechnologies, CNRS UMR9001, Palaiseau, France
2 Université Paris Diderot, Sorbonne Paris Cité, Paris, France
Nanophotonics will play a crucial for the convergence of microelectronics and photonics to cope with the requirements of compactness and low power consumption. During this talk I will present our recent progress on III-V on SOI photonic crystal devices such as lasers and nonlinear parametric sources.
Keywords: Nanophotonics, Photonic crystals, lasers, Nonlinear optics
Improved Quantum Dot Uniformity and Its Impact on Reflection Sensitivity (Invited paper)
Justin Norman1, Zeyu Zhang2, Daehwan Jung1, Jianan Duan3, Heming Huang3, Frédéric Grillot3, John Bowers1,2,3
1 Institute for Energy Efficiency, University of California, Santa Barbara, USA
2 Electrical & Computer Engineering Department, University of California, Santa Barbara, USA
3 LTCI, Télécom ParisTech, Université Paris-Saclay, Paris, France.
A semiconductor laser’s sensitivity to parasitic reflections is directly tied to its linewidth enhancement factor. Quantum dot lasers have been shown to have significantly lower linewidth enhancement factors than quantum well lasers with values of zero or even negative values having been theorized for sufficiently uniform dot size distributions. Through optimized growth conditions on silicon, we have obtained highly uniform quantum dots with ultralow linewidth enhancement factors of 0.5 for ground state emission at threshold. Between their low linewidth enhancement factor and strongly damped relaxation oscillation, these lasers show an expected ~17 dB increase in the critical feedback level for coherence collapse relative to state-of-the-art commercial quantum wells.
Keywords: quantum dot laser, silicon photonics, epitaxial integration
Stabilization of an InP-based laser using the Pound-Drever-Hall technique deploying electro-optic tuning for the electrical feedback
Stefanos Andreou, Kevin A. Williams, Erwin A.J.M. Bente
Institute for Photonic Integration, Eindhoven University of Technology,
P.O. Box 513 – 5600 MB Eindhoven – Netherlands
In this work, we present results from the stabilization of an integrated single frequency InP diode laser with an extended cavity using the Pound-Drever-Hall locking technique. The laser is a multi-section DBR laser with an intra-cavity ring resonator. It is locked to a 1 MHz wide resonance of a highly stable Fabry-Perot etalon via electrical feedback which is applied on the rear DBR section. The DBR section is used in reverse bias to tune the lasing mode thus avoiding any thermal effects. We show measurements that confirm the drift stabilization of the laser to an etalon resonance for over 10 minutes and linewidth measurements using the delayed self-heterodyne method. The latter show a reduction of the laser linewidth below 50 kHz which is at the moment limited by the time delay of the current feedback loop.
Keywords: InP, laser, stabilization Pound-Drever-Hall locking, phase modulator.
A comparison between waveguide and microresonator single-photon sources in silicon photonics
Imad I. Faruque 1, Gary F. Sinclair 1, Damien Bonneau1, John G. Rarity1 and Mark G. Thompson1
1Quantum Engineering Technology Labs, University of Bristol, Bristol BS8 1TL, United Kingdom
For useful photonic quantum information protocols, such as quantum computing, quantum simulation, quantum machine learning, we need integrated photonic circuits to accommodate interaction of a large number of qubits , , , . A key resource of the interaction of qubits is quantum interference. For high
interference visibility, the single-photons that construct the qubits have to be indistinguishable. Measuring indistinguishability between two independent single-photon sources, we can determine the fidelity of the qubit interaction in a photonic platform. With such measurements in silicon, we have found microresonators more suitable than waveguides for such applications as it has 72% visibility without any spectral filtering. For both structures, photon number purity drastically affects the raw indistinguishability.
Keywords: Single-photon source, non-linear optics, silicon photonics, four-wave mixing, quantum computing.