Edge-coupling of O-band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printing
Ruggero Loi1, Simone Iadanza1, 2, Brendan Roycroft1, James O’Callaghan1, Lei Liu1, Kevin Thomas1, Agnieszka Gocalinska1, Emanuele Pelucchi1, Alex Farrell3, Steven Kelleher3, Raja Fazan Gull3, Antonio Jose Trindade3, Chris Anthony Bower3, Liam O’Faolain1, 2 and Brian Corbett
1Tyndall National Institute, University College Cork, Cork, T12R5CP, Ireland.
2Cork Institue of Technology, Bishopstown, Cork, T12 P928, Ireland.
3X-Celeprint Ltd., Cork, T12R5CP, Ireland.
O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 μm deep recess created in the 3 μm thick oxide layer of a 220 nm SOI wafer. A 7×1.5 μm2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <1 μm lateral misalignment and incorporates a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer-waveguides-based photonic integrated circuits.
Keywords: Heterogeneous integration, III-V semiconductors laser, silicon photonics, polymer waveguides.
Thermo-optic Nonlinearities in MoS2-on-silicon Microring Resonator
Yaojing Zhang, Li Tao, Dan Yi, Jian-Bin Xu, Hon Ki Tsang
The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong
In this paper, we characterize the thermo-optic nonlinearities of a MoS2-on-silicon microring resonator under different input powers. We experimentally observe an enhanced thermal-optic effect giving rise to about three times increase in resonance shift rate compared to that of a silicon microring resonator without MoS2.
Keywords: thermo-optic nonlinearities, MoS2, microring resonator.
Erbium-doped Yttria-stabilized Zirconia thin layers for photonic applications
Alicia Ruiz-Caridad1, Guillaume Marcaud1, Joan Manel Ramirez2, Ludovic Largeau1, Thomas Maroutian1, Sylvia Matzen1, Carlos Alonso-Ramos1, Guillaume Agnus1, Sylvain Guerber1,3, Charles Baudot3, Frederic Boeuf3, Vladyslav Vakarin1,4, Elena Duran-Valdeiglesias1, Eric Cassan1, Delphine Marris-Morini1, Philippe Lecoeur1, Laurent Vivien1.
1 Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N – Palaiseau, 91120 Palaiseau, France
2 III-V lab, joint lab from Nokia Bell Labs, Thales and CEA, 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex
3 TR&D STMicroelectronics SAS, Crolles, 38920, France 4IMEC, Kapeldreef 75,3001 Leuven, Belgium
Near-infrared (near-IR) integrated photonic devices in silicon-based platforms have been studied over the last decades for applications such as on-chip optical communications and sensing. Driven by the need of more power efficient new photonic systems, the hybrid integration of functional oxides has become an attractive route to explore new physical phenomena. In this regard, Yttria-Stabilized Zirconia (YSZ) stands as an interesting material for its structural, chemical and optical properties. We recently demonstrated YSZ waveguides with propagation losses of 2 dB/cm at a wavelength of 1380 nm . We have recently explored the introduction of active rare-earth dopants into YSZ waveguides to demonstrate on-chip optical amplifier. For that purpose, Er3+ ions are preferred due to their luminescence properties within the C-band of telecommunications. In this study, we demonstrate strong luminescence from Er-doped YSZ multilayer stacks around λ = 1.54 μm, grown by pulsed laser deposition (PLD) technique. The alternation of YSZ thin films and sub-nanometric layers of Er has enabled us to have control of the Er-Er inter-distance in the growth direction, hence being able to strongly decrease the luminescence quenching caused by upconversion processes. Moreover, the optical properties of Er-doped YSZ thin films grown on silicon nitride strip photonic waveguides under resonant pumping will be discussed in this paper.
Keywords: functional oxides, nanophotonics, rare earths, yttria-stabilized zirconia, optical gain, hybrid photonic platform.
Waveguide-coupled Localized Excitons From an Atomic Monolayer
Integrated on a Silicon Nitride Photonic Platform
Fr´ed´eric Peyskens1;2;3, Chitraleema Chakraborty1, Muhammad Muneeb2;3,
Dries Van Thourhout2;3, Dirk Englund1
1Quantum Photonics Group, RLE, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2Ghent University – imec, Technologiepark 15, 9052 Ghent, Belgium
3Center for Nano- and Biophotonics, Ghent University, Belgium
Monolayers of transition metal dichalcogenides (TMDCs) have attracted much attention since the discovery of single photon emission due to localized exciton formation. The possibility to integrate these materials directly on photonic integrated circuits makes them an interesting candidate for realizing quantum photonic devices.
Here, we demonstrate the coupling of localized excitons from a tungsten diselenide (WSe2) monolayer into a silicon nitride waveguide by measuring the waveguide-coupled fluorescence from the WSe2. This result could pave the way towards scalable fabrication of on-chip single photon sources.
Keywords: Quantum photonics, 2D transition metal dichalcogenides (TMDCs), silicon nitride, single photon sources.