2018 Session – Si photonics for tele/datacom

Developments in 300mm Low-Power Si Capacitive Modulators

Charles Baudot, I. Charlet, M. Douix, S. Guerber, S. Crémer, N. Vulliet, J. Planchot, R. Blanc, L. Babaud, C. Alonso-Ramos, D. Benedikovich, S. Messaoudène, S. Kerdiles, P. Acosta-Alba, C. Euvrard-Colnat, E. Cassan, D. Marris-Morini, L. Vivien, and F. Boeuf
Technology R&D, STMicroelectronics SAS, 850 rue Jean Monnet – 38920 Crolles France
Centre de Nanosciences et de Nanotechnologies, Univ. Paris Sud, Paris Saclay, CNRS – 91405 Orsay, France
Université Grenoble Alpes – CEA, LETI, MINATEC Campus, 38054 Grenoble, France Tel: +33438923492, e-mail: charles.baudot@st.com

We report on the development of high speed phase shifters for next generation of Si photonics transceivers, based on capacitive structures. Experimental measurements show a VL of 0.5V.cm in accumulation regime. We also show that the addition of a SiGe layer at the capacitive interface leads to an improvement of 25 % of the phase shifter efficiency.

Keywords: Silicon capacitive modulators, damascene process, poly silicon, SiGe booster

Th.2.A.1 3-Invited Paper, Charles Baudot (STMicroelectronics), “High-speed Si transceiver for datacom applications”

Low-threshold and High-speed Quantum-dot Microring Lasers on Silicon

Chong Zhang, Di Liang, Geza Kurzcveil, Raymond G. Beausoleil
System Architecture Lab, Hewlett Packard Labs, Hewlett Packard Enterprise Palo Alto, CA 94304 – United States Tel: +18058866378
e-mail: chong.zhang@hpe.com

We report the demonstration of the first hybrid quantum-dot (QD) microring lasers integrated on silicon. By transferring 1.3 µm InAs/GaAs QD gain layers to prepatterned SOI substrate, low threshold-current hybrid ring lasers are realized on silicon. High-speed direct current modulation of over 10 Gbps is achieved as well.

Keywords: Quantum dot laser, hybrid integration, direct laser modulation, silicon photonics.

Th.2.A.2 84-Highly Rated Paper, Low-threshold and High-speed Quantum-dot Microring Lasers on Silicon

In As/GaAs quantum dot 1.3 µm DF Blaser heterogeneously integrated on a silicon waveguide circuit

Sarah Uvin, Sulakshna Kumari, Andreas De Groote, Steven Verstuyft, Geert Morthier, Dries Van Thourhout and Gunther Roelkens
Photonics Research Group, Department of Information Technology
Ghent University
imec iGent, Technologiepark-Zwijnaarde 15 – 9052 Ghent – Belgium
Center for Nano- and Biophotonics (NB-Photonics)
Ghent University – Ghent – Belgium 3
e-mail: sarah.uvin@ugent.be

We demonstrate the first single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 µm wavelength heterogeneously integrated on a Si photonics waveguide circuit. High temperature operation with continuous wave lasing up to 100◦C is shown. Threshold current densities as low as 353 A/cm2 were measured. Single mode lasing around 1320 nm with a side-mode suppression ratio of 40 dB is obtained. These devices are attractive candidates for uncooled wavelength division multiplexing (WDM) transceivers in data centers.

Keywords: Quantum dot lasers, silicon photonics, distributed feedback laser

Th.2.A.3 103-Highly Rated Paper, InAs-GaAs quantum dot 1.3 um DFB laser heterogeneously integrated on a silicon waveguide circuit

Next Generation Silicon Photonics

Michal Lipson
Department of Electrical Engineering, Columbia University, New York, NY Email:michal.lipson@columbia.edu

In the past decade, silicon photonics has been shown as a platform for high-performance massively integrated optical devices that can be integrated with state-of-the-art microelectronics. The toolbox of integrated nanophotonics today is rich: from the ability to modulate, guide and amplify at GHz bandwidths, to optomechanical and nonlinear devices. The explosion of silicon photonics enabled components with high performance and opened the door to a variety of applications. Recently new atomically thin materials integrated on silicon photonics platform as a post-process have shown the ability to tailor optical properties of integrated devices by simultaneously tailoring the geometry of the device structures and the intrinsic electronic excitations of the material.

Keywords: Silicon photonics, integrated optics

Th.2.A.4 7-Invited Paper Michal Lipson (Columbia Univ.), “Next generation Silicon Photonics”

O-Band QPSK modulation based on a silicon dual-drive MachZehnder

Diego Pérez-Galacho, Laurent Bramerie, Charles Baudot, Mohamed Chaibi, Sonia Messaoudène, Nathalie Vulliet, Laurent Vivien, Christophe Peucheret and Delphine Marris-Morini
Universitat Politènica de València, c/ Camino de Vera s/n – 46022, Valencia – Spain Tel: +34963879735, e-mail: diepega@upv.es
Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N-Orsay, 91405 Orsay cedex, France
Univ Rennes, CNRS, FOTON – UMR 6082, F-22305 Lannion, France STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France

Advanced modulation formats will be required in next generation optical interconnects in order to keep up with future bandwidth demand. In this work QPSK modulation in the O-band is experimentally demonstrated using a silicon-based dual-drive Mach-Zehnder modulator.

Keywords: Silicon modulators, silicon photonics, integrated optics, advanced modulation formats, coherent optical communications

Th.2.A.5 44-Regular Paper, O-Band QPSK modulation based on a silicon dual-drive Mach-Zehnder

Dual-polarization O-band silicon nitride Bragg filters with high extinction ration

Elena Durán-Valdeiglesias, Carlos Alonso-Ramos, Sylvain Guerber, Dorian Oser, Xavier Le Roux, Daniel Benedikovic, Nathalie Vulliet, Eric Cassan, Delphine Marris-Morini, Charles Baudot, Frédéric Boeuf, Laurent Vivien
Centre de Nanoscience et Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay, C2N – Orsay, 91405 Orsay cedex, France STMicroelectronics SAS –850 rue Jean Monnet –38920 Crolles, France
Tel: +33169126306, e-mail: carlos.ramos @u-psud.fr

Silicon nitride (SiN) photonic circuits operating in the original communication band (O-band) have a great potential to complement the Silicon (Si) photonic platform for the implementation of high-performance transceivers for Datacom applications. The low thermal coefficient, the reduced refractive index contrast, and the CMOS compatibility of SiN, make it an ideal solution to address certain key challenges in the Si photonic circuits. These particularly includes large thermal drift, tight fabrication tolerances, and strong polarization dependence. In this paper, we propose and experimentally demonstrate a SiN Bragg filter designed for dual-polarization operation. By optimizing the dimensions of a triangularly-shaped lateral corrugation, we yielded Bragg gratings with a quasisquare transversal geometry that minimizes filter birefringence. Exploiting this concept, we experimentally demonstrated SiN Bragg filters, fabricated with a single-etch step process in 300 mm Si photonics platform, exhibiting an experimental polarization independent rejection close to 40 dB in the O-band, with a bandwidth of 15 nm and negligible off-band excess loss.

Keywords: silicon nitride, silicon photonics, Bragg gratings, dual-polarization, wavelength filters

39 Th.2.A.6 39-Highly Rated Paper, Dual-polarization O-band silicon nitride Bragg filters with high extinction ration