Novel high-performance lasers in InP
Dr. Milan L. Mashanovitch Freedom Photonics LLC
41 Aero Camino, Santa Barbara, CA 93117 – USA
Tel: +18059674900, e-mail: email@example.com
In this paper, we provide an overview of a variety of novel, high-performance lasers and PICs in InP that Freedom Photonics has developed and commercialized over the past several years. Those include lasers in several different wavelength ranges: 1300nm, 1550nm and 1650nm. The applications for these devices span highperformance sources for Datacom systems, integrated optical transmitters for telecom applications, lasers for optical sensing as well as lasers for free-space optical communications.
Keywords: lasers, tunable lasers, photonic integrated circuits, Indium Phosphide.
Gain characteristics of 1.3µm GaInNAs/GaAs quantum wells monolithically integrated on Ge
Jukka Viheriälä, Antti T. Aho, Riku Isoaho, Arto Aho,
Antti Tukiainen, Mircea Guina
Optoelectronics Research Centre, Tampere University of Technology Korkeakoulunkatu 3, Tampere, Finland
Gain characteristics of quantum-well laser diodes monolithically integrated on Ge substrate are reported. The gain is provided by two GaInNAsSb/GaAs quantum-wells with emission at 1.2 µm–1.3 µm. The diode exhibits continuous-wave operation with mW-level output power at room temperature.
Keywords: Monolithic integration, laser diode, gain, GaInNAs quantum well
100 Gb/s Duobinary Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode
Amin Abbasi, Jochem Verbist, Leila A. Shiramin, Michiel Verplaetse, Timothy De Keulenaer, Ramses Pierco, Arno Vyncke, Guy Torfs, Geert Morthier, Johan Bauwelinck, Gunther Roelkens
Photonics Research Group, INTEC, Ghent University-IMEC, 9000 Ghent – Belgium
IDLab, Ghent University – IMEC, 9000 Ghent, Belgium
BiFast, 9000 Ghent, Belgium + currently at Antwerp Space, Antwerp, Belgium *corresponding author e-mail: firstname.lastname@example.org
We demonstrate for the first time a serial 100 Gb/s transmission with a heterogeneously integrated InP/Si DFB laser by operating the InP tapers – used to couple to the underlying silicon waveguide- as electroabsorption modulators. An in-house developed driver IC, fabricated in a 0.13µm SiGe BiCMOS technology, employing a 4×1 multiplexer and an analog six tap feedforward equalizer was used to generate a duobinary modulated signal at 100 Gb/s on the tapers, requiring no power-consuming digital signal processing (DSP) or digital-to-analog converters (DAC). With these devices, open eyes and a bit-error ratio (BER) down to 1.6E-3 at 100 Gb/s electrical duobinary are obtained. As the DFB consists of 2 independent tapers and emits light from both ends, this laser can be used to generate 2x 100 Gb/s data streams from a single transmitter, leading to a reduction in area, power and packaging cost over a 2-laser approach. Such a transmitter would be an attractive solution for 200 GbE and 400 GbE transceivers in short-reach optical interconnects.
Keywords: Semiconductor Lasers, IIIV-on-Si, Silicon Photonics, Electro-absorption modulation, Optical Interconnects
GaInAsP/InP Membrane Lasers for On-chip Applications
Tomohiro Amemiya, Daisuke Inoue, Takuo Hiratani, Takahiro Tomiyasu, Tatsuya Uryu, Nagisa Nakamura, Nobuhiko Nishiyama and Shigehisa Arai
Institute of Innovative Research (IIR), Tokyo Institute of Technology
Tokyo 152-8552, Japan
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo 152-8552, Japan Tel: +81357342555,
e-mail: email@example.com, firstname.lastname@example.org
Currently in Sumitomo Electric Industries, Ltd
Currently in Furukawa Electric Co., Ltd
Toward the practical use of on-chip optical interconnection in LSIs, we developed an ultralow-power DR laser made in an InP-based membrane on a silicon substrate. The device showed a low threshold current of 0.21 mA, a high differential quantum efficiency of 32 %, and a maximum light output of 0.5 mW. Demonstration of data transmission confirmed a small energy cost of 93 fJ/bit at 20 Gbps operation.
Keywords: Semiconductor laser, III-V semiconductors, Optical interconnection, Photonic integrated circuits.
Micro-transfer printing for advanced scalable hybrid photonic integration
R. Loi, B. Roycroft, J. O’Callaghan, J. Justice, A. Gocalinska, E. Peluchi, A. J. Trindade, C. A. Bower, G. Roelkens, B. Corbett
Tyndall National Institute, University College Cork, Lee Maltings, Cork – Ireland Tel: +353212346380, e-mail: email@example.com
X-Celeprint Limited, Lee Maltings, Cork, – Ireland
Ghent University-Imec, Technologiepark-Zwijnaarde 15, Ghent,- Belgium
Integrated photonics has lagged the complexity possible with electronics by orders of magnitude. This is changing with the development of photonic integrated circuits on silicon photonics which has allowed thousands of optical components to be integrated and where many applications in communications and sensing can be addressed. Nevertheless, the key component of a gain block is missing while other functions can have better performance with separately optimised materials. Micro-transfer printing is emerging as an effective, accurate and massively parallel technique for the heterogeneous integration of photonic and electronic devices to different platforms including silicon photonics. We describe some recent development in this technology.
Keywords: Heterogeneous integration, photonic devices, lasers, coupling, silicon photonics.