InP based generic platform: the complete and versatile solution for photonic integrated circuits
SMART Photonics B.V, Horsten 1, Eindhoven, 5612AX, The Netherlands
Introduction InP based photonic components have been around for some time and have proven to be a reliable source for communication systems. InP is the material of choice for monolithic integration of active and passive components, and with the introduction of generic integration platforms the technology has received a large boost. Researchers at TU Eindhoven have been pioneering generic photonic integration technology since the beginning of the century. In cooperation with a number of partners the generic integration technology has reached maturity. The model has proven successful and InP based integration technology is currently commercially offered by two foundries.
1×2 Multimode interference coupler with ultra-low reflections in membrane photonic integrated circuits
A.J. MILLAN-MEJIA, J.J.G.M. VAN DER TOL, M.K. SMIT
Photonic Integration Group (PhI), Dept. of Electrical Engineering, Technische Universiteit, Eindhoven, De Rondom 70, 5612AP, Eindhoven, The Netherlands
Multimode interference (MMI) couplers are basic building blocks in most photonic integration circuit platforms. Such devices are used as splitters and combiners. However, they are heavily affected by parasitic reflections, mainly because of the resonances due to the self-imaging properties of the structures and the abrupt transitions they comprise. These reflections can compromise the expected performance of the integrated circuits.
Fully Integrated Serial Dual-Polarization Electroabsorption Modulator PIC in InP
Moritz Baier, Francisco M. Soares, Marko Gruner, Tom Gaertner, Martin Moehrle, Norbert Grote, Martin Schell
Fraunhofer HHI, Einsteinufer 37, 10587 Berlin, Germany
With the advent of stokes space modulation, polarization multiplexing no longer is only relevant for coherent long haul communications. In this work, we propose and demonstrate a novel serial configuration to generate true dual-polarization (DP) electro-absorption modulated data from a single chip.
First comparison of InGaAsP and InGaAlAs electroabsorption modulator in COBRA generic platform
Marija TRAJKOVIC, Florian LEMAITRE, Helene DEBREGEAS, Kevin A. WILLIAMS, Xaveer J. M. Leijtens
COBRA Research Institute, Eindhoven University of Technology, P. O. Box 513, 5600 MB Eindhoven, Netherlands
III-V Lab, Campus de Polytechnique, 1 avenue Augustin Fresnel,
F-91767 Palaiseau Cedex, France
Introduction Electro-absorption modulators (EAMs) are an attractive solution in applications where high speed modulation is required with high extinction ratio, low drive voltage and integration with lasers. They are particularly promising for highbandwidth optical communication systems. The possibility of using InGaAlAs compounds, instead of InGaAsP, has shown improved performance at high operating temperatures due to the favourably high band offset for electrons.
Pockels Effect in Strained Silicon Waveguides
Mathias BERCIANO, Pedro DAMAS, Xavier LE ROUX, Guillaume MARCAUD, Paul CROZAT, Carlos ALONSO RAMOS, Daniel BENEDIKOVIC, Delphine MARRISMORINI, Eric CASSAN, Laurent VIVIEN
Center for Nanoscience and Nanotechnology (C2N), Bat 220 rue André Ampère – CNRS, Université Paris-Sud, Université Paris-Saclay,
Orsay, 91405, France
With the increasing demand of data current chip-scale communication systems based on metallic interconnects suffer from rate limitations and power consumptions. In this context, Silicon Photonics has emerged as an alternative solution replacing the classical copper interconnects by silicon waveguides while taking advantage of the wellestablished CMOS foundries techniques to reduce fabrication costs. Silicon is now considered as an excellent candidate for the development of integrated optical functionalities.