2017 Session T2: Mid Infrared Devices, Chair: Gunther Roelkens

Heterogeneously Integrated III-V/SOI DBR Laser with Over 7 nm Continuous Wavelength Tuning Range

Photonics Research Group, INTEC, Ghent University – imec,
Ghent, 9000, Belgium
Center for Nano- and Biophotonics (NB-Photonics), Ghent University,
Ghent, 9000, Belgium

Many tele- and datacom applications require single-wavelength tunable lasers with easy wavelength control and sufficient tuning range. Such lasers can for instance be used in WDM-based optical networks or to replace fixed wavelength distributed feedback (DFB) lasers. In recent years there has been a lot of interest in tunable lasers heterogeneously integrated on the silicon-on-insulator (SOI) platform. Several heterogeneously integrated III-V/SOI tunable distributed Bragg reflector (DBR) and DFB lasers have already been demonstrated. DBR-types typically employ a single or double silicon ring with heaters as wavelength-selective and tunable element. In recent work we demonstrated a discretely tunable sampled grating (SG)-DFB laser with a discontinuous tuning range of more than 55 nm.


Development of a SiGe Arrayed Waveguide Grating in the 2185-2285 cm-1 range

Julien Favreau, Jean-Michel Hartmann, Pierre Labeye, Jean-Marc Fedeli,
CEA-LETI, MINATEC Campus, 17 Rue des Martyrs
38054 GRENOBLE Cedex 9, France

Abstract: In this paper, we present the design, process and characterization of an AWG based on a SiGe step index waveguide platform, operating at 4.5 µm (2185-2285 cm-1). A transmission of -1.6 dB and a crosstalk below -12 dB are demonstrated.

Keywords— AWG, silicon photonics, multiplexer, gas sensing, MIR.


C-band linear propagation characteristics for a 300 nm film height Silicon Nitride photonics platform

Gloria MICÓ, Luis BRU, Daniel PASTOR, Daniel PÉREZ, David DOMENECH, Ana M. SÁNCHEZ, Josep M. CIRERA, Javier SANCHEZ, Carlos DOMÍNGUEZ and Pascual MUÑOZ
Photonic-IC group @ Photonic Research Labs,
Universitat Politècnica de Valencia, Spain
VLC Photonics S.L., Ed9B-UPV, c/ Camino de Vera s/n, Valencia, Spain
IMB-CNM-CSIC, Campus Belaterra UAB, Barcelona, Spain

Silicon Nitride (Si3N4) material is widely used in the fabrication of microelectronic circuits, as a basic material for developing the electronic devices mainly due to its electronic, structural and chemical properties.


A Fiber-to-Chip Grating Coupler for the Ge-on-Si Platform at 5μm wavelength

Sanja Radosavljevic, Bart Kuyken, Gunther Roelkens
Photonics Research Group, Ghent University – imec,
Technologiepark 15, 9052 Ghent, Belgium
Center for Nano- and Biophotonics, Technologiepark 15,
9052 Ghent, Belgium

Abstract: We present efficient TM fiber-to-chip grating couplers that couple light between a single mode InF fiber and Germanium-on-Silicon (Ge-on-Si) waveguides in the 5 μm wavelength range. In recent years, Ge-on-Si has emerged as a platform of interest for sensing applications beyond 4 μm [1, 2]. Ge has low losses for light in the 412 μm range, which makes it suitable for the realization of mid-infrared (midIR) photonic integrated circuit gas and liquid sensors.


Mid-­‐infrared  integrated  photonics  in  silicon  and   germanium  

Goran Z. MASHANOVICH, Wei CAO, Zhibo QU, Ahmed OSMAN, Yangbo WU, Taintian LI, Jordi Soler PENADES, Stevan STANKOVIC, Radan SLAVIK,  Frederic Y. GARDES,  Vinita MITTAL, Ganapathy S. MURUGAN, James S.   WILKINSON, David J. THOMSON, Callum G. LITTLEJOHNS1,
Optoelectronic  Research  Centre,  University  of  Southampton,  Southampton,  SO17  1BJ,  UK
Silicon  Photonics  and  Microsystems  Lab,
Peking  University,  00871  Beijing, P.R.  China

Mid­‐infrared  (MIR)  silicon  and  germanium  photonic  devices  and  systems could  be   useful  in  a  range  of  applications.  Silicon  and  germanium  are transparent  in  the  MIR,   have  large  refractive  indices  and  are  dominant materials  in  microelectronics.   Germainum  is  particularly  interesting photonic  material  that  has  larger  transparency   range,  refractive  index, optical  modulation,  non-­‐linear  effects  and  carrier  mobility   compared  to silicon.  As  such,  both  Si  and  Ge  devices  can  be  very  compact.