Heterogeneously Integrated III-V/SOI DBR Laser with Over 7 nm Continuous Wavelength Tuning Range
Sören DHOORE, Gunther ROELKENS, Geert MORTHIER
Photonics Research Group, INTEC, Ghent University – imec,
Ghent, 9000, Belgium
Center for Nano- and Biophotonics (NB-Photonics), Ghent University,
Ghent, 9000, Belgium
Many tele- and datacom applications require single-wavelength tunable lasers with easy wavelength control and sufficient tuning range. Such lasers can for instance be used in WDM-based optical networks or to replace fixed wavelength distributed feedback (DFB) lasers. In recent years there has been a lot of interest in tunable lasers heterogeneously integrated on the silicon-on-insulator (SOI) platform. Several heterogeneously integrated III-V/SOI tunable distributed Bragg reflector (DBR) and DFB lasers have already been demonstrated. DBR-types typically employ a single or double silicon ring with heaters as wavelength-selective and tunable element. In recent work we demonstrated a discretely tunable sampled grating (SG)-DFB laser with a discontinuous tuning range of more than 55 nm.
Development of a SiGe Arrayed Waveguide Grating in the 2185-2285 cm-1 range
Julien Favreau, Jean-Michel Hartmann, Pierre Labeye, Jean-Marc Fedeli,
CEA-LETI, MINATEC Campus, 17 Rue des Martyrs
38054 GRENOBLE Cedex 9, France
Abstract: In this paper, we present the design, process and characterization of an AWG based on a SiGe step index waveguide platform, operating at 4.5 µm (2185-2285 cm-1). A transmission of -1.6 dB and a crosstalk below -12 dB are demonstrated.
Keywords— AWG, silicon photonics, multiplexer, gas sensing, MIR.
C-band linear propagation characteristics for a 300 nm film height Silicon Nitride photonics platform
Gloria MICÓ, Luis BRU, Daniel PASTOR, Daniel PÉREZ, David DOMENECH, Ana M. SÁNCHEZ, Josep M. CIRERA, Javier SANCHEZ, Carlos DOMÍNGUEZ and Pascual MUÑOZ
Photonic-IC group @ Photonic Research Labs,
Universitat Politècnica de Valencia, Spain
VLC Photonics S.L., Ed9B-UPV, c/ Camino de Vera s/n, Valencia, Spain
IMB-CNM-CSIC, Campus Belaterra UAB, Barcelona, Spain
Silicon Nitride (Si3N4) material is widely used in the fabrication of microelectronic circuits, as a basic material for developing the electronic devices mainly due to its electronic, structural and chemical properties.
A Fiber-to-Chip Grating Coupler for the Ge-on-Si Platform at 5μm wavelength
Sanja Radosavljevic, Bart Kuyken, Gunther Roelkens
Photonics Research Group, Ghent University – imec,
Technologiepark 15, 9052 Ghent, Belgium
Center for Nano- and Biophotonics, Technologiepark 15,
9052 Ghent, Belgium
Abstract: We present efficient TM fiber-to-chip grating couplers that couple light between a single mode InF fiber and Germanium-on-Silicon (Ge-on-Si) waveguides in the 5 μm wavelength range. In recent years, Ge-on-Si has emerged as a platform of interest for sensing applications beyond 4 μm [1, 2]. Ge has low losses for light in the 412 μm range, which makes it suitable for the realization of mid-infrared (midIR) photonic integrated circuit gas and liquid sensors.
Mid-‐infrared integrated photonics in silicon and germanium
Goran Z. MASHANOVICH, Wei CAO, Zhibo QU, Ahmed OSMAN, Yangbo WU, Taintian LI, Jordi Soler PENADES, Stevan STANKOVIC, Radan SLAVIK, Frederic Y. GARDES, Vinita MITTAL, Ganapathy S. MURUGAN, James S. WILKINSON, David J. THOMSON, Callum G. LITTLEJOHNS1,
Optoelectronic Research Centre, University of Southampton, Southampton, SO17 1BJ, UK
Silicon Photonics and Microsystems Lab,
Peking University, 00871 Beijing, P.R. China
Mid‐infrared (MIR) silicon and germanium photonic devices and systems could be useful in a range of applications. Silicon and germanium are transparent in the MIR, have large refractive indices and are dominant materials in microelectronics. Germainum is particularly interesting photonic material that has larger transparency range, refractive index, optical modulation, non-‐linear effects and carrier mobility compared to silicon. As such, both Si and Ge devices can be very compact.