Session 6 | Active Devices

Electronic Control and Stabilization of Silicon Photonic Microring Resonator Circuits

Hasitha Jayatilleka, Robert Boeck, Jonas Flueckiger, Sudip Shekhar, Nicolas A. F. Jaeger, Lukas Chrostowski*
Department of Electrical and Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, BC V6T 1Z4, Canada.

In silicon microring-based circuits with many resonators, in-resonator photoconductive heaters (IRPHs) provide a means for automatic tuning and stabilization by allowing for both monitoring and tuning the resonance conditions of individual resonators. Using IRPHs, automatic tuning of a doped-silicon series-coupled four-ring Vernier filter is demonstrated.


A 40 GBaud Integrated Silicon Coherent Receiver

Jochem VERBIST1,2,3*, Jing ZHANG1,3, Bart MOENECLAEY2,3, Wouter SOENEN1,3, John VAN WEERDENBURG,4, Roy VAN UDEN4, Chigo OKONKWO4, Xin YIN2,3, Gunther ROELKENS1,3, Johan BAUWELINCK2,3
1Photonics Research Group, INTEC, Ghent University -imec, Belgium
2INTEC_design, INTEC, Ghent University – iMinds- imec, Belgium
3Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Belgium
4COBRA Research Institute, Eindhoven University of Technology, The Netherlands

Introduction The growth of internet traffic has warranted a substantial amount of research towards high-speed transceivers for long-haul networks. Coherent communication provides multiple advantages over the classic OOK transmission schemes, including compensation of linear and non-linear fiber distortions and increased spectral efficiency thanks to phase-diversity and multilevel constellations (e.g. QPSK and 16QAM) [1]. In the near future integrated coherent transceivers are expected to become key components in the metropolitan area networks, and in long-term even in access networks [2,3]. This will require a substantially reduction in size, cost and power consumption with respect to the current coherent transceivers. Silicon photonics emerges as an ideal platform to realize such devices. The high index contrast between Si and SiO2 allows for devices with very small footprint and the circuits can be realized on large 200mm / 300mm wafers using existing commercial CMOS foundries allowing for low-cost chips. In this paper we present new results on the silicon integrated coherent receiver (ICR) presented in [4], operating at 40 GBaud for QPSK and 16-QAM.


Waveguide Integrated Avalanche Photodiodes for InP PICs for Data-Center Applications

1Heinrich-Hertz-Institut, Einsteinufer 37, Berlin, Germany
2Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, Freiburg, Germany

A high-speed avalanche photodiode (APD) with a gain-bandwidth-product up to 250 GHz is presented. By using a p-doped hybrid absorber in a SACM structure evanescently coupled to a waveguide bandwidths above 20 GHz and a multiplied responsivity (MR)bandwidth product of 135 A/W*GHz are achieved.


4-Channel All-Optical Mode Demultiplexing on a Silicon Photonic Chip

Andrea ANNONI1, Emanuele GUGLIELMI1, Marco CARMINATI1, Giorgio FERRARI1, Nicola PESERICO1, Stefano GRILLANDA1, Marc SOREL2, Andrea MELLONI1 and Francesco MORICHETTI1
1Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, via Ponzio 34/5, 20133 Milano, Italy
2School of Engineering, University of Glasgow, Glasgow, G12 8LT, UK

Mode-division multiplexing (MDM) is a promising approach to boost the capacity of optical fibers [1]. Yet coherent detection and power hungry multiple-input multipleoutput (MIMO) digital signal processing (DSP) are typically required to unscramble mixed modes. Here, we demonstrate a 4-channel silicon photonic MIMO demultiplexer performing all-optical unscrambling of four mixed modes using a mesh of cascaded Mach-Zehnder interferometers (MZIs). Demultiplexing of 10 Gbit/s channels with less than -20 dB crosstalk and with a power penalty of 1.5 dB at BER level of 10-8 is achieved.


A Thermally Tunable but Athermal Silicon MZI Filter

Antonio RIBEIRO12*, Sarvagya DWIVEDI12, Wim BOGAERTS123
1Photonics Research Group, Ghent University-Imec, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium
2Center for Nano- and Biophotonics, Ghent University, Belgium
3Luceda Photonics, Dendermonde, Belgium

The very high refractive index from silicon enables the construction of waveguides, and therefore other devices, with very high index contrast, leading to micron-sized components and compact circuits. An important variable that has to be taken in account when adopting silicon is its high thermo-optic coefficient (1.8 × 10-4 K-1). That characteristic of the material allows efficient tuning of wavelength filters with local integrated heaters. On the other hand, the high thermo-optic coefficient makes filters (and therefore the whole circuit) much more susceptible to ambient temperature variations.


InGaAsN-GaAsN Electro-Absorption Modulator: Material and Process Development

Robert N. Sheehan1*, Mingqi Yang1, Francesco Azzarello1, Ville-Markus Korpijärvi3, Frank H. Peters1 2, Mircea Guina3
1Integrated Photonics Group, Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland
2Physics Dept., University College Cork, Western Road, Cork, Ireland
3Semiconductor Technology Group, Tampere University of Technology, Tampere, Finland

As the global demand for data intensive internet services increases, future computing systems will be required to transfer peta-bytes of data between servers at higher data rates and with lower power consumption. To manage increased data traffic there is a need to develop high-speed optical interconnect technology that can be deployed in future server architectures [1]. The Integrated Photonics Group at Tyndall National Institute (TYN), in close collaboration with the Semiconductor Technology Group at Tampere University of Technology (TUT), is developing an InGaAsN-GaAsN multiplequantum well epitaxy for use as an electroabsorption modulator (EAM) designed to operate at 1300 (nm) [2]. Dilute nitride quantum wells are used because they exhibit superior temperature performance over existing InP technology [3]. In this paper results on the development of the material and its opto-electronic characterisation are presented.


Transparent Conducting Oxide Electro-Optic Modulators: a Comprehensive Study based on the Drift-Diffusion Semiconductor Model

Georgios SINATKAS1*, Dimitrios C. ZOGRAFOPOULOS2, Alexandros PITILAKIS1, Romeo BECCHERELLI2, Emmanouil E. KRIEZIS1
1Department of Electrical and Computer Engineering, AUTH, Thessaloniki, R-54124, Greece
2 Istituto per la Microelettronica e Microsistemi, Consiglio Nazionalle delle Ricerche (CNR-IMM), 00133 Rome, Italy

SOI-based field-effect electro-optic (EO) modulators comprising a transparent conducting oxide (indium tin oxide, ITO) are rigorously studied in the near-infrared (NIR) under a multiphysics modelling framework. The performance of two representative silicon photonics platforms (Si-rib and Si-slot) is evaluated, Fig. 1(a)-(b). The proposed modulators attain very satisfactory extinction ratio (ER), resulting in μm-length configurations of negligible insertion loss (IL), accompanied by ultra-high bandwidth.


MEMS atomic standards

University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17  Str. 50-372 Wrocław, Poland

Atomic standards enables very precise control of time and frequency (atomic clocks), as well as high precision of magnetic field measurements. Research on miniature atomic references utilized MEMS alkali atom cell, are conducted in several research groups. The common motivation to work on this topic is growing demand on high precision and equate time and frequency references, mostly for telecommunication (terrestrial base stations for GSM), global navigation satellite systems (GNSS), but also to develop highly sensitive magnetometers. To achieve market success, atomic standards must comply with the good parameters and be mass produced to give a low price. It is possible in way of miniaturization and integration utilized microengineering technology.