Direct Integration of Quantum Dot Lasers on Silicon
Alwyn SEEDS1*, Siming CHEN1, Jiang WU1, Mingchu TANG1, Huiyun LIU1
1Department of Electronic and Electrical Engineering,
University College London, Torrington Place,
London, WC1E 7JE, England
a.seeds@ucl.ac.uk
Complex photonic systems for optical communications can benefit from monolithic integration of the key photonic devices with their interconnecting waveguides. Advantages include improved stability and environmental ruggedness, reduced size and reduced cost.
Although silicon photonics technology has demonstrated high performance optical modulators and detectors [1,2], efficient electrically pumped optical sources are key to delivering the required range of system functions.
Mode locked laser systems on InP integration technology platforms
Erwin Bente1, Sylwester Latkowski1, Valentina Moskalenko1,
Mònica Llorens-Revull1, Kevin Williams1
1COBRA Research Institute, Department of Electrical Engineering,
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven,
The Netherlands
e.a.j.m.bente@tue.nl
In recent years a number of Indium phosphide (InP) based photonic integration platforms have emerged which enable complex optical circuits containing optical amplifiers, (electro-optic) phase modulators, low-loss passive waveguides, on-chip mirrors, splitters, filters etcetera [1]. These capabilities provide a freedom in the design of planar integrated mode locked laser sources which is starting to resemble the freedom one has when using bulk optics, but with the added advantages of stability and compactness. This development thus raises the expectation that integrated mode locked laser (MLL) systems can be realised with a performance that supersedes planar waveguide devices that only use an active layer stack and bring integrated MLL devices to applications.
Monolithically Integrated Lasers for Comb Generation in Bandwidth Variable Transponders
M. Deseada GUTIERREZ1,2*, Jules BRADDELL2, Frank SMYTH1,2,
Liam P. BARRY1
1The Rince Institute, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
2Pilot Photonics, Invent Centre, Dublin City University, Dublin 9, Ireland
desi@pilotphotonics.com
Elastic optical networks (EONs) are being considered for the next generation of optical transport networks due to their potential to provide enhanced spectral efficiency and outstanding flexibility. In EONs, transmission parameters such as modulation format, bandwidth occupancy and baud rate can be adjusted dynamically to suit traffic demands and different transmission scenarios [1-2]. These functionalities can be achieved through the use of innovative bandwidth variable transponders (BVTs) that can be reconfigured by a remote controller. BVTs can benefit from the incorporation of an optical frequency comb (OFC) source which generates the optical carriers from a single subsystem and enables the reduction or elimination of guard bands by ensuring stable frequency spacing between the carriers [1-2].
Integrated Long Cavity Mode Locked Ring Laser
Vinicio CORRAL1*, Robinson GUZMAN1, Carlos GORDON1, Luis J. ORBE2,
Mu Chieh LO1, Guillermo CARPINTERO1
1Department of Electronic Technology, University Carlos III of Madrid, Leganés, 28911, Spain
2PhoeniX Software, Hengelosestraat 705, 7521 PA Enschede,
The Netherlands
fcorral@ing.uc3m.es
We report an integrated 30 mm long cavity mode locked ring laser at 1555 nm, with a low repetition rate at 2. Hz. The device uses InP-based activepassive integration technology and integrated multimode interference reflectors. Passive (PML) and hybrid mode locked (HML) operation are experimentally demonstrated, with picosecond pulses of 4.65 ps and 4.23 ps pulse-widths respectively. The device exhibits a very narrow RF linewidth of the beat note of few KHz.
High-Speed Direct Modulation of Waveguide-Coupled Metal-Cavity Nano-Light-Emitting Diodes
B. ROMEIRA*, V. DOLORES-CALZADILLA, D. HEISS, F. PAGLIANO, S. BIRINDELLI, P. J. van VELDHOVEN, M. K. SMIT, and A. FIORE COBRA
Research Institute, Eindhoven University of Technology, PO Box 513,
5600 MB Eindhoven, The Netherlands
b.m.romeira@tue.nl
Future optical interconnects require ultra-small light sources working efficiently (~fJ/bit) at tens of Gb/s speeds [1]. This will be of paramount importance for the development of ultrafast computing and optical communication systems. Electrically driven nanolasers recently succeeded in achieving lasing in sub-µm sized metallodielectic cavities [2]. Nonetheless, high losses in metal cavities make it challenging to accomplish efficient lasing at room-temperature (RT), while their predicted high-speed modulation properties have remained unexplored.
Multi-Wavelength Lasing with SOA and AWG for Linear-Cavity Fiber Sensor
Mao OKADA1, Kazuto TAKAHASHI1, Hiroki KISHIKAWA1*, Nobuo GOTO1 Yi-Lin YU2, and Shien-Kuei LIAW2
1Tokushima University, Tokushima 770-8506, Japan
2National Taiwan University of Science and Technology, Taipei City 10607, Taiwan
kishikawa.hiroki@tokushima-u.ac.jp
Optical fiber sensing has been extensively studied in various areas such as aging deterioration measurement of constructed building, seismic measurement, environmental measurement. Optical fiber sensing systems are classified into two configurations. One consists of an optical source, an optical fiber transmission line, and sensing elements. The other consists of a fiber lasing system including sensing element in the cavity [1-3]. Compared to the former, the latter systems have advantages such as higher resolution for wavelength-shift induced by sensing element, and higher signalto-noise ratio (SNR). By employing a fiber Bragg grating (FB) as the sensing element, reflecting center wavelength can be shifted due to environmental temperature or tension.